File:Schottky barrier on p-SiC.PNG: Difference between revisions

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imported>John R. Brews
({{Image_Details|user-pd |description = Theoretical Schottky barrier height on ''p''-SiC vs. metal electronegativity |author = ~~~ |date-created = 2011-02-09 |pub-country = USA |notes = Patterned after {{cite book |title=Semiconductor Surfaces and Interfaces |author=Winfried Mönch |url=http://www.amazon.com/Semiconductor-Surfaces-Interfaces-Winfried-M%C3%B6nch/dp/3540679022/ref=sr_1_1?s=books&ie=UTF8&qid=1297043881&sr=1-1#reader_3540679022 |isbn=3540679022 |edition=3rd ed |publi...)
 
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== Summary ==
== Summary ==
{{Image_Details|user-pd
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|description  = Theoretical Schottky barrier height on ''p''-SiC vs. metal electronegativity
|author      = [[User:John R. Brews|John R. Brews]]
|date-created = 2011-02-09
|pub-country  = USA
|notes        = Patterned after {{cite book |title=Semiconductor Surfaces and Interfaces |author=Winfried Mönch |url=http://www.amazon.com/Semiconductor-Surfaces-Interfaces-Winfried-M%C3%B6nch/dp/3540679022/ref=sr_1_1?s=books&ie=UTF8&qid=1297043881&sr=1-1#reader_3540679022 |isbn=3540679022 |edition=3rd ed |publisher=Springer |year=2001}} The different barrier heights for the same metal correspond to different interface structures. The solid line is the theoretical result based upon metal induced gap states (MIGS).
|versions    =
}}
== Licensing/Copyright status ==
{{CC|zero|1.0}}

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