File:Schottky barrier on p-SiC.PNG: Difference between revisions

Revision as of 11:37, 9 February 2011

Summary

Title / Description	Theoretical Schottky barrier height on p-SiC vs. metal electronegativity
Citizendium author	John R. Brews
Date created	2011-02-09
Country of first publication	USA
Notes	Patterned after Winfried Mönch (2004). “Figure 9”, W. J. Choyke, Hiroyuki Matsunami, Gerhard Pensl: Silicon carbide: recent major advances. Springer, p. 333. ISBN 3540404589. The different barrier heights for the same metal correspond to different interface structures. The solid line is the theoretical result based upon metal induced gap states (MIGS).
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 |date-created = 2011-02-09
 |pub-country  = USA
-|notes        = Patterned after {{cite book |title=Semiconductor Surfaces and Interfaces |author=Winfried Mönch |url=http://www.amazon.com/Semiconductor-Surfaces-Interfaces-Winfried-M%C3%B6nch/dp/3540679022/ref=sr_1_1?s=books&ie=UTF8&qid=1297043881&sr=1-1#reader_3540679022 |isbn=3540679022 |edition=3rd ed |publisher=Springer |year=2001}} The different barrier heights for the same metal correspond to different interface structures. The solid line is the theoretical result based upon metal induced gap states (MIGS).
+|notes        = Patterned after {{cite book |title=Silicon carbide: recent major advances |author=Winfried Mönch |editor=W. J. Choyke, Hiroyuki Matsunami, Gerhard Pensl|url=http://books.google.com/books?id=mLBmKotEe9cC&pg=PA333 |pages=p. 333 |chapter=Figure 9 |isbn=3540404589  |publisher=Springer |year=2004}} The different barrier heights for the same metal correspond to different interface structures. The solid line is the theoretical result based upon metal induced gap states (MIGS).
 |versions     =
 }}
 == Licensing/Copyright status ==
 {{CC|zero|1.0}}