File:Seimiconductor band bending.PNG: Difference between revisions
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Revision as of 15:10, 6 January 2011
Summary
| Title / Description
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Band bending under external field for p-type semiconductor |
|---|---|
| Citizendium author
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John R. Brews |
| Date created
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2011-01-06 |
| Country of first publication
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USA |
| Notes
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Top panel: Applied voltage depletes holes from surface Bottom panel: Larger applied voltage further depletes holes but conduction band becomes low enough in energy to populate an inversion layer |
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Licensing/Copyright status
This media, Seimiconductor band bending.PNG, is licenced under the Creative Commons CC0 1.0 Universal License
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File history
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 18:52, 11 March 2022 |  | 1,221 × 937 (88 KB) | Maintenance script (talk | contribs) | == Summary == Importing file |
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