Semiconductor/Related Articles: Difference between revisions
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imported>John R. Brews |
imported>John R. Brews |
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==Other related topics== | ==Other related topics== | ||
<!-- List topics here that are related to this topic, but neither wholly include it nor are wholly included by it. --> | <!-- List topics here that are related to this topic, but neither wholly include it nor are wholly included by it. --> | ||
{{r|MOS capacitor}} | |||
{{r|MOSFET}} | {{r|MOSFET}} | ||
{{r|Semiconductor diode}} | {{r|Semiconductor diode}} | ||
{{r|Schottky diode}} | {{r|Schottky diode}} | ||
{{r|Electronic band structure}} | {{r|Electronic band structure}} | ||
Revision as of 21:26, 10 April 2011
- See also changes related to Semiconductor, or pages that link to Semiconductor or to this page or whose text contains "Semiconductor".
Parent topics
Subtopics
- MOS capacitor [r]: A two-terminal device consisting of three layers: a metal gate, a semiconducting body and a separating insulator, often an oxide. [e]
- MOSFET [r]: A type of field-effect transistor with four electrical contacts and three layers: a metal top layer (connected to the gate contact),separated by an insulating layer (usually an oxide layer) from a semiconductor layer (connected to the body contact). The gate voltage switches "on" and "off" the electrical connection between a source and drain contact at the semiconductor surface. [e]
- Semiconductor diode [r]: Two-terminal device that conducts current in only one direction, made of two or more layers of material, of which at least one is a semiconductor. [e]
- Schottky diode [r]: A two-terminal electrical device consisting of conductive gate (for example, a metal) on top of a semiconductor body used for switching, rectification and photo-detection [e]
- Electronic band structure [r]: The very closely spaced energy levels available to electrons in solids, which are separated from each other by energy gaps. [e]